16N50C3(2003) 查看數據表（PDF） - Infineon Technologies
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16N50C3 Datasheet PDF : 11 Pages
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Final data
SPW16N50C3
9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 16 A pulsed
SPW16N50C3
16
V
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPW16N50C3
A
12
10 0.2 VDS max
0.8 VDS max
8
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
16
A
12
10 1
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
12 Avalanche energy
EAS = f (Tj)
par.: ID = 8 , VDD = 50 V
0.5
mJ
10
Tj(start) = 25°C
8
6
Tj(start) = 125°C
4
2
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
Page 7
0.3
0.2
0.1
0
20 40 60 80 100 120 °C 160
Tj
2003-06-30
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