16N50C3(2003) 查看數據表（PDF） - Infineon Technologies

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16N50C3
(Rev.:2003)

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPW16N50C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Inverse diode continuous

forward current

IS

TC=25°C

-

-

16 A

Inverse diode direct current,

ISM

pulsed

-

-

48

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

VSD

trr

Qrr

Irrm

dirr/dt

VGS=0V, IF=IS

VR=380V, IF=IS ,

diF/dt=100A/µs

-

1

1.2 V

- 420 - ns

-

7

- µC

-

40

-A

-

tbd

- A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.012

0.023

0.043

0.149

0.17

0.069

K/W

Cth1

Cth2

Cth3

Cth4

Cth5

Cth6

0.0002495

0.0009406

0.001298

0.00362

0.009484

0.077

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Page 4

2003-06-30

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