16N50C3(2003) 查看數據表（PDF） - Infineon Technologies
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16N50C3 Datasheet PDF : 11 Pages
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Final data
SPW16N50C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
-
14
-S
ID=10A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,2) Co(er)
energy related
Effective output capacitance,3) Co(tr)
time related
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 400V
- 1600 - pF
- 800 -
-
30
-
-
64
- pF
-
124
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
VDD=380V, VGS=0/10V,
-
10
- ns
tr
ID=16A, RG=4.3Ω
-
8
-
td(off)
-
50
-
tf
-
8
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Qgs
Qgd
VDD=380V, ID=16A
Gate charge total
Qg
VDD=380V, ID=16A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=380V, ID=16A
-
7
- nC
-
36
-
-
66
-
-
5
-V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2003-06-30
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