2SK4075B-ZK-E1-AY 查看數據表（PDF） - Renesas Electronics
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2SK4075B-ZK-E1-AY Datasheet PDF : 10 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4075B is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075B-ZK-E1-AY
Pure Sn (Tin)
2SK4075B-ZK-E2-AY
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
• Low on-state resistance
RDS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 13 A)
• Low Ciss: Ciss = 2230 pF TYP.
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±50
A
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150 °C
IAS
20.8
A
EAS
43
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.47
125
°C/W
°C/W
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D20258EJ1V0DS00 (1st edition)
Date Published March 2010 NS
Printed in Japan
2010
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