2SK4075B-ZK-E1-AY 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

2SK4075B-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Renesas Electronics 

PACKAGE DRAWING (Unit: mm)

TO-252 (MP-3ZK)

6.5±0.2

5.1 TYP.

4.3 MIN.

4

2.3±0.1

0.5±0.1

No Plating

2SK4075B

123

1.14 MAX.

2.3 2.3

No Plating

0.76±0.12

0 to 0.25

0.5±0.1

1.0

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

6

Data Sheet D20258EJ1V0DS

Share Link: