2SK4075B-ZK-E1-AY 查看數據表（PDF） - Renesas Electronics

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2SK4075B-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Renesas Electronics 

2SK4075B

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 13 A

VGS = 10 V, ID = 25 A

RDS(on)2 VGS = 4.5 V, ID = 13 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 20 V

Rise Time

tr

ID = 25 A

Turn-off Delay Time

td(off)

VGS = 10 V

Fall Time

tf

RG = 0 Ω

Total Gate Charge

QG

VDD = 32 V

Gate to Source Charge

QGS

VGS = 10 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 50 A

IF = 50 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

trr

IF = 50 A, VGS = 0 V

Qrr

di/dt = 100 A/μs

MIN. TYP. MAX. UNIT

1

μA

±100 nA

1.5 2.0 2.5 V

7.0

S

5.9 7.9 mΩ

7.5 10 mΩ

2230

pF

319

pF

171

pF

15

ns

17

ns

51

ns

5

ns

44

nC

8

nC

12

nC

0.9 1.5 V

30

ns

25

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDD

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 μs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS

90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D20258EJ1V0DS

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