BB504M 查看數據表（PDF） - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
比赛名单
BB504M Datasheet PDF : 11 Pages
| |||
BB504M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
ID
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Ratings
Unit
6
V
+6
V
–0
+6
V
–0
30
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
6
Gate1 to source breakdown
voltage
V(BR)G1SS +6
Gate2 to source breakdown
voltage
V(BR)G2SS +6
Gate1 to source cutoff current IG1SS
—
Gate2 to source cutoff current IG2SS
—
Gate1 to source cutoff voltage VG1S(off) 0.6
Gate2 to source cutoff voltage VG2S(off) 0.6
Drain current
I D(op)
13
Forward transfer admittance |yfs|
24
Input capacitance
c iss
1.7
Output capacitance
c oss
1.0
Reverse transfer capacitance crss
—
Power gain (1)
PG
25
Noise figure (1)
Power gain (2)
NF
—
PG
17
Noise figure (2)
NF
—
Typ Max Unit Test Conditions
—
—
V
ID = 200µA, VG1S = VG2S = 0
—
—
V
IG1 = +10µA, VG2S = VDS = 0
—
—
V
IG2 = +10µA, VG1S = VDS = 0
—
+100 nA
—
+100 nA
0.85 1.1 V
0.85 1.1 V
16
19
mA
29
34
mS
2.1 2.5 pF
1.4 1.8 pF
0.027 0.05 pF
30
—
dB
1.0 1.8 dB
22
—
dB
1.75 2.3 dB
VG1S = +5V, VG2S = VDS = 0
VG2S = +5V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 120kΩ
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 120kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 200MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 900MHz
2
Share Link: 