BB504M 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB504M Datasheet PDF : 11 Pages
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Drain Current vs. Gate Resistance
30
20
10
V DS = VG1=5 V
VG2S = 4 V
0
10 20
50 100 200 500 1000
Gate Resistance RG (kΩ)
BB504M
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V DS = VG1= 5 V
R G = 120 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage VGS2 (V)
Gain Reduction vs.
Gate2 acto Source Voltage
0
10
20
30
VDS = VG1 = 5 V
40
R G = 120 kΩ
f = 200 MHz
50
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
Gain Reduction vs.
Gate2 acto Source Voltage
0
10
20
30
V DS = V G1= 5 V
40
R G = 120 kΩ
f = 900 MHz
50
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
7
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