BB504M 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

比赛名单

BB504M

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Hitachi -> Renesas Electronics 

Test Circuits

BB504M

• DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

• 200 MHz Power Gain, Noise Figure Test Circuit

VT

1000p

VG2

1000p

VT

1000p

Input(50Ω)

1000p

1000p

47k

47k

BBFET

L1

36p

1000p

1SV70

R G 120k

47k

L2

1000p

Output(50Ω)

10p max

RFC

1SV70

1000p

V D = V G1

Unit Resistance (Ω)

Capacitance (F)

L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns

RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns

3

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