BB504M 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB504M

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB504M

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

- .2

-5

-4

-3

- .4

-2

- .6

- .8 - 1

- 1.5

Test Condition: VDS = 5 V, V G1 = 5 V

VG2S = 4 V, R G = 120 kΩ,

Zo = 50 Ω

50 to 1000 MHz (50 MHz step)

S21 Parameter vs. Frequency

90° Scale: 1 / div.

120°

60°

150°

30°

180°

0°

- 150°

- 30°

- 120°

- 90°

- 60°

Test Condition: VDS = 5 V, V G1 = 5 V

VG2S = 4 V, R G = 120 kΩ,

Zo = 50 Ω

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

90° Scale: 0.004/ div.

120°

60°

150°

30°

180°

0°

- 150°

- 30°

- 120°

- 90°

- 60°

Test Condition: VDS = 5 V, V G1 = 5 V

VG2S = 4 V, RG = 120 k Ω,

Zo = 50 Ω

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

- .2

- .4

- .6

- .8 - 1

-5

-4

-3

-2

- 1.5

Test Condition: VDS = 5 V, V G1 = 5 V

VG2S = 4 V, RG = 120 k Ω,

Zo = 50 Ω

50 to 1000 MHz (50 MHz step)

8

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