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2SJ574 数据手册 ( 数据表 ) - Renesas Electronics

2SJ574 image

零件编号
2SJ574

产品描述 (功能)
Silicon P Channel MOS FET High Speed Switching

Other PDF
  2003   2014  

PDF
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page
7 Pages

File Size
82.3 kB

生产厂家
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
   RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)
   RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)

Page Link's: 1  2  3  4  5  6  7 

零件编号
产品描述 (功能)
PDF
生产厂家
2SJ574
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ575
Silicon P Channel MOS FET High Speed Switching
视图
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2SJ587
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ588
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ576
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ576
Silicon P Channel MOS FET High Speed Switching
视图
Renesas Electronics
2SJ575
Silicon P Channel MOS FET High Speed Switching
视图
Renesas Electronics
2SJ184-T
P-Channel MOS FET / High-Speed Switching
视图
NEC => Renesas Technology
J180
P-Channel MOS FET / HIGH-SPEED SWITCHING
视图
NEC => Renesas Technology
H7P0601DL
Silicon P-Channel MOS FET High Speed Power Switching
视图
Renesas Electronics

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