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2SJ575 数据手册 ( 数据表 ) - Renesas Electronics

2SJ575 image

零件编号
2SJ575

产品描述 (功能)
Silicon P Channel MOS FET High Speed Switching

Other PDF
  no available.

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page
10 Pages

File Size
155.3 kB

生产厂家
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
   RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)
   RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)
• 4 V gate drive device.
• Small package (MPAK)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
2SJ574
Silicon P Channel MOS FET High Speed Switching ( Rev : 2014 )
视图
Renesas Electronics
2SJ574
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ575
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ587
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ588
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ574
Silicon P Channel MOS FET High Speed Switching ( Rev : 2003 )
视图
Renesas Electronics
2SJ574
Silicon P Channel MOS FET High Speed Switching
视图
Renesas Electronics
2SJ576
Silicon P Channel MOS FET High Speed Switching
视图
Hitachi -> Renesas Electronics
2SJ576
Silicon P Channel MOS FET High Speed Switching
视图
Renesas Electronics
2SJ184-T
P-Channel MOS FET / High-Speed Switching
视图
NEC => Renesas Technology

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