Hitachi -> Renesas Electronics - 2SJ587 PDF 数据手册 , 2SJ587 数据表

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2SJ587 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

零件编号

2SJ587

产品描述 (功能)

Silicon P Channel MOS FET High Speed Switching

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8 Pages

File Size

35.9 kB

生产厂家

Hitachi -> Renesas Electronics

Features
• Low on-resistance
RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
• 2.5 V gate drive device.
• Small package (SMPAK)

Page Link's: 1 2 3 4 5 6 7 8

零件编号

产品描述 (功能)

PDF

生产厂家

2SJ574

Silicon P Channel MOS FET High Speed Switching ( Rev : 2014 )

视图

Renesas Electronics

2SJ574

Silicon P Channel MOS FET High Speed Switching

视图

Hitachi -> Renesas Electronics

2SJ575

Silicon P Channel MOS FET High Speed Switching

视图

Hitachi -> Renesas Electronics

2SJ588

Silicon P Channel MOS FET High Speed Switching

视图

Hitachi -> Renesas Electronics

2SJ574

Silicon P Channel MOS FET High Speed Switching ( Rev : 2003 )

视图

Renesas Electronics

2SJ574

Silicon P Channel MOS FET High Speed Switching

视图

Renesas Electronics

2SJ576

Silicon P Channel MOS FET High Speed Switching

视图

Hitachi -> Renesas Electronics

2SJ576

Silicon P Channel MOS FET High Speed Switching

视图

Renesas Electronics

2SJ575

Silicon P Channel MOS FET High Speed Switching

视图

Renesas Electronics

2SJ184-T

P-Channel MOS FET / High-Speed Switching

视图

NEC => Renesas Technology

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