datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  ETC  >>> A2V64S40 PDF

A2V64S40 数据手册 ( 数据表 ) - ETC

A2V64S40 image

零件编号
A2V64S40

Other PDF
  no available.

PDF
DOWNLOAD     

page
79 Pages

File Size
4.2 MB

生产厂家
ETC
ETC ETC

[Powerchip Semiconductor Corporation]

General Description
The A2V64S40CTP is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.


FEATUREs
• 3.3V power supply
• All inputs are sampled at the positive going
• LVTTL compatible with multiplexed address edge of the system clock
• Four banks operation
• Auto & self refresh
• MRS cycle with address key programs
   - CAS latency (2 & 3)
   - Burst length (1, 2, 4, 8 & Full page)
   - Burst type (Sequential & Interleave)
• 64ms refresh period (4K cycle)
• Burst read single write operation
• LDQM & UDQM for masking

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
64M Single Data Rate Synchronous DRAM
Unspecified
64M Single Data Rate Synchronous DRAM
Elpida Memory, Inc
WTR (Wide Temperature Range) 64M Single Data Rate Synchronous DRAM
Elpida Memory, Inc
256M Single Data Rate Synchronous DRAM
Unspecified
256M Single Data Rate Synchronous DRAM
Unspecified
64M Synchronous DRAM
MITSUBISHI ELECTRIC
64M Synchronous DRAM
Mitsumi
256M Double Data Rate Synchronous DRAM
Elpida Memory, Inc
256M Double Data Rate Synchronous DRAM
Mitsumi
256M Double Data Rate Synchronous DRAM
MITSUBISHI ELECTRIC

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]