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CY7C1351-40 数据手册 ( 数据表 ) - Cypress Semiconductor

CY7C1351 image

零件编号
CY7C1351-40

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13 Pages

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180.5 kB

生产厂家
Cypress
Cypress Semiconductor Cypress

Functional Description
The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write/Read transitions. The CY7C1351 is pin/functionally compatible to ZBT SRAMs IDT71V547, MT55L128L36F, and MCM63Z737.


FEATUREs
• Pin compatible and functionally equivalent to ZBT™ devices IDT71V547, MT55L128L36F, and MCM63Z737
• Supports 66-MHz bus operations with zero wait states
   — Data is transferred on every clock
• Internally self-timed output buffer control to eliminate the need to use OE
• Registered inputs for Flow-Through operation
• Byte Write capability
• 128K x 36 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
   — 11.0 ns (for 66-MHz device)
   — 12.0 ns (for 50-MHz device)
   — 14.0 ns (for 40-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• JEDEC-standard 100 TQFP package
• Burst Capability—linear or interleaved burst order Low standby power

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零件编号
产品描述 (功能)
PDF
生产厂家
256Kx18 Flow-Through SRAM with NoBL™ Architecture
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256Kx18 Flow-Through SRAM with NoBL™ Architecture
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128Kx36 Pipelined SRAM with NoBL™ Architecture
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128Kx36 Pipelined SRAM with NoBL™ Architecture
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4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
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72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2012 )
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4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Architecture ( Rev : 2007 )
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72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2013 )
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4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Architecture
Cypress Semiconductor
4-Mbit (128 K × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2013 )
Cypress Semiconductor

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