EFA1200A 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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EFA1200A
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +37.0dBm TYPICAL OUTPUT POWER
• 16.0dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 12,000 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 200mA PER BIN RANGE
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