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GP1200ESM33 数据手册 ( 数据表 ) - Dynex Semiconductor

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零件编号
GP1200ESM33

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The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.


FEATURES
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters

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