datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Dynex Semiconductor  >>> GP200MHS12 PDF

GP200MHS12 数据手册 ( 数据表 ) - Dynex Semiconductor

GP200MHS12 image

零件编号
GP200MHS12

产品描述 (功能)

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
96.3 kB

生产厂家
Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.


FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction


APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
Half Bridge IGBT Module ( Rev : 2004 )
Dynex Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor
“HALF-BRIDGE” IGBT MODULE
SemiWell Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor
“HALF-BRIDGE” IGBT Module
SemiWell Semiconductor
“HALF-BRIDGE” IGBT MODULE
SemiWell Semiconductor
Half Bridge IGBT Module
Dynex Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]