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HM5117400B 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

HM5117400B image

零件编号
HM5117400B

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page
25 Pages

File Size
244.4 kB

生产厂家
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode as a high speed access mode.


FEATUREs
• Single 5 V (±10%)
• High speed
    - Access time : 60 ns/ 70 ns/ 80 ns (max)
• Low power dissipation
    - Active mode : 605 mW/550 mW/495 mW(max)
    - Standby mode : 11 mW (max)
                               : 0.83 mW (max) (L-version)
• Fast page mode capability
• Long refresh period
    - 2048 refresh cycles : 32 ms
                                      : 128 ms (L-version)
    3 variations of refresh
    - RAS-only refresh
    - CAS-before-RAS refresh
    - Hidden refresh
• Battery backup operation (L-version)
• Test function
    - 16-bit parallel test mode

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零件编号
产品描述 (功能)
PDF
生产厂家
4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
4,194,304 Word by 36 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
1,048,576-word × 4-bit Dynamic Random Access Memory
Hitachi -> Renesas Electronics
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
4,194,304 Word by 8 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
4,194,304 Word by 32 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
4,194,304 x 8 Bit CMOS Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CORPORATION
262,144-word × 16-bit Dynamic Random Access Memory
Hitachi -> Renesas Electronics
262,144-word × 16-bit Dynamic Random Access Memory
Hitachi -> Renesas Electronics
262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
Austin Semiconductor

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