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IHW30N60T 数据手册 ( 数据表 ) - Infineon Technologies

IHW30N60T image

零件编号
IHW30N60T

Other PDF
  2006   2008  

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page
12 Pages

File Size
538.4 kB

生产厂家
Infineon
Infineon Technologies Infineon

Features:
• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5μs
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
   - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications


零件编号
产品描述 (功能)
PDF
生产厂家
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
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Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode ( Rev : 2006 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode ( Rev : 2006 )
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode
Infineon Technologies
Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2008 )
Infineon Technologies
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel diode
Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
Unspecified
Low Loss IGBT in Trench and Fieldstop technology
Infineon Technologies
Low Loss IGBT in Trench and Fieldstop technology
Infineon Technologies
Low Loss IGBT in TrenchStop and Fieldstop technology ( Rev : 2009 )
Infineon Technologies

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