DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors provide excellent
   current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
   and excellent lifetime
• Multicell geometry gives good balance of dissipated
   power and low thermal resistance
• Input matching cell allows an easier design of circuits.

APPLICATIONS
• Common emitter class-A linear power amplifiers up
   to 2 GHz.