DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.

FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS
• Intended for use in common base class-B power amplifiers up to 4.2 GHz.