DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES
• Suitable for short and medium
   pulse applications up to
   500 µs/10%
• Internal input and output
   prematching networks allow an
   easier design of circuits
• Diffused emitter ballasting resistors
   improve ruggedness
• Interdigitated emitter-base
   structure provides high emitter
   efficiency
• Gold metallization with barrier
   realizes very stable characteristics
   and excellent lifetime
• Multicell geometry improves power
   sharing and reduces thermal
   resistance.

APPLICATIONS
   Intended for use in common base,
   class C, broadband, pulsed power
   amplifiers for TCAS applications in
   the 1030 to 1090 MHz band. Also
   suitable for medium pulse, heavy duty
   operation within this band.