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M48Z129V-70PM1(2010) 数据手册 ( 数据表 ) - STMicroelectronics

M48Z129V image

零件编号
M48Z129V-70PM1

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生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP module. The M48Z129Y/V directly replaces industry standard 128 K x 8 SRAM. It also provides the non-volatility of FLASH without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.


FEATUREs
■ Integrated, ultra low power SRAM, power-fail control circuit, and battery
■ Conventional SRAM operation; unlimited WRITE cycles
■ 10 years of data retention in the absence of power
■ Microprocessor power-on reset (reset valid even during battery backup mode)
■ Battery low pin - provides warning of battery end-of-life
■ Automatic power-fail chip deselect and WRITE protection
■ WRITE protect voltages (VPFD = power-fail deselect voltage):
   – M48Z129Y: VCC = 4.5 to 5.5 V
      4.2 V ≤ VPFD ≤ 4.5 V
      (contact the ST sales office for availability)
   – M48Z129V: VCC = 3.0 to 3.6 V
      2.7 V ≤ VPFD ≤ 3.0 V
■ Self-contained battery in the CAPHAT™ DIP package
■ Pin and function compatible with JEDEC standard 128 K x 8 SRAMs
■ RoHS compliant
   – Lead-free second level interconnect

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零件编号
产品描述 (功能)
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生产厂家
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER® SRAM ( Rev : 2010 )
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