DESCRIPTION
The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Logic level
• Super low on-state resistance
   RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A)
   RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• High current rating
   ID(DC) = ±82 A
• Low input capacitance
   Ciss = 6000 pF TYP.
• Designed for automotive application and AEC-Q101 qualified