OptiMOSTMPower-MOSFET,25V
BSB012NE2LXI
Diagram13:Avalanchecharacteristics
102
100 °C
125 °C
25 °C
101
Diagram14:Typ.gatecharge
12
10
8
6
12 V
5V
20 V
4
2
100
100
101
102
tAV[µs]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
0
103
0
20
40
60
Qgate[nC]
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.Drain-sourceleakagecurrent
10-2
Gate charge waveforms
10-3
125 °C
100 °C
10-4
75 °C
10-5
25 °C
10-6
0
5
10
15
20
VDS[V]
IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
10
Rev.2.1,2015-09-09