BSB012NE2LXI 查看數據表（PDF） - Infineon Technologies
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BSB012NE2LXI Datasheet PDF : 14 Pages
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OptiMOSTMPower-MOSFET,25V
BSB012NE2LXI
Diagram9:Drain-sourceon-stateresistance
2.0
Diagram10:Typ.gatethresholdvoltage
2.5
1.6
2.0
1.2
1.5
typ
0.8
1.0
0.4
0.5
0.0
-40
0
40
80
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
0.0
120
160
-40
0
40
80
Tj[°C]
VGS(th)=f(Tj);VGS=VDS;ID=10mA
120
160
Diagram11:Typ.capacitances
104
Ciss
Coss
103
Diagram12:Forwardcharacteristicsofreversediode
103
-40 °C
25 °C
100 °C
150 °C
102
101
100
Crss
102
0
10-1
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
VDS[V]
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
IF=f(VSD);parameter:Tj
Final Data Sheet
9
Rev.2.1,2015-09-09
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