BSB012NE2LXI 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

比赛名单

BSB012NE2LXI

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

OptiMOSTMPower-MOSFET,25V

BSB012NE2LXI

4Electricalcharacteristics

Table4Staticcharacteristics

Parameter

Drain-source breakdown voltage

Breakdown voltage temperature

coefficient

Gate threshold voltage

Zero gate voltage drain current,

Tj=25°C

Zero gate voltage drain current,

Tj=125°C

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

Symbol

V(BR)DSS

Min.

25

dV(BR)DSS/dTj -

VGS(th)

1.2

IDSS

-

IDSS

-

IGSS

-

RDS(on)

-

-

RG

0.3

gfs

95

Values

Typ. Max.

-

-

15 -

-

2

25 500

4

-

10 100

1.3 1.6

1.0 1.2

0.6 1.2

190 -

Unit Note/TestCondition

V VGS=0V,ID=10mA

mV/K ID=10mA,referencedto25°C

V

VDS=VGS,ID=250µA

µA VDS=20V,VGS=0V

mA VDS=20V,VGS=0V

nA VGS=20V,VDS=0V

mΩ

VGS=4.5V,ID=30A

VGS=10V,ID=30A

Ω-

S

|VDS|>2|ID|RDS(on)max,ID=30A

Table5Dynamiccharacteristics

Parameter

Symbol

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Min.

-

-

-

-

-

-

-

Values

Typ. Max.

4400 5900

1900 2600

190 -

5.4 -

6.4 -

32 -

4.8 -

Unit Note/TestCondition

pF VGS=0V,VDS=12V,f=1MHz

pF VGS=0V,VDS=12V,f=1MHz

pF VGS=0V,VDS=12V,f=1MHz

ns

VDD=12V,VGS=10V,ID=30A,

RG,ext=1.6Ω

ns

VDD=12V,VGS=10V,ID=30A,

RG,ext=1.6Ω

ns

VDD=12V,VGS=10V,ID=30A,

RG,ext=1.6Ω

ns

VDD=12V,VGS=10V,ID=30A,

RG,ext=1.6Ω

Final Data Sheet

5

Rev.2.1,2015-09-09

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