BSB012NE2LXI 查看數據表（PDF） - Infineon Technologies
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BSB012NE2LXI Datasheet PDF : 14 Pages
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OptiMOSTMPower-MOSFET,25V
BSB012NE2LXI
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
10.5 14
7.1 -
7.3 11
10.7 -
30 40
2.4 -
62 82
26 -
39 52
Unit Note/TestCondition
nC VDD=12V,ID=30A,VGS=0to4.5V
nC VDD=12V,ID=30A,VGS=0to4.5V
nC VDD=12V,ID=30A,VGS=0to4.5V
nC VDD=12V,ID=30A,VGS=0to4.5V
nC VDD=12V,ID=30A,VGS=0to4.5V
V VDD=12V,ID=30A,VGS=0to4.5V
nC VDD=12V,ID=30A,VGS=0to10V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=12V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
Qrr
Min.
-
-
-
-
Values
Typ. Max.
-
57
-
227
0.56 -
5
-
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=12A,Tj=25°C
nC VR=15V,IF=IS,diF/dt=400A/µs
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
6
Rev.2.1,2015-09-09
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