BSB012NE2LXI 查看數據表（PDF） - Infineon Technologies

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BSB012NE2LXI

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

OptiMOSTMPower-MOSFET,25V

BSB012NE2LXI

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Parameter

Symbol

Continuous drain current

Pulsed drain current2)

Avalanche current, single pulse3)

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

ID

ID,pulse

IAS

EAS

VGS

Ptot

Tj,Tstg

Min.

-

-

-

-

-

-

-20

-

-

-40

Values

Typ. Max.

-

170

-

107

-

37

-

400

-

40

-

130

-

20

-

57

-

2.8

-

150

Unit Note/TestCondition

VGS=10V,TC=25°C

A VGS=10V,TC=100°C

VGS=10V,TA=25°C,RthJA=45K/W1)

A TC=25°C

A TC=25°C

mJ ID=40A,RGS=25Ω

V-

W

TC=25°C

TA=25°C,RthJA=45K/W

°C

IEC climatic category;

DIN IEC 68-1: 40/150/56

3Thermalcharacteristics

Table3Thermalcharacteristics

Parameter

Symbol

Thermal resistance, junction - case,

bottom

Thermal resistance, junction - case,

top

Device on PCB,

6 cm2 cooling area1)

RthJC

RthJC

RthJA

Values

Unit Note/TestCondition

Min. Typ. Max.

-

1.0 -

K/W -

-

-

2.2 K/W -

-

-

45 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See figure 3 for more detailed information

3) See figure 13 for more detailed information

Final Data Sheet

4

Rev.2.1,2015-09-09

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