DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

FEATURES
• Suitable for short and medium pulse applications up to 100 µs/10%
• Internal input and output prematching networks allow an easier design of circuits
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS
   Intended for use in common base, class C, broadband, pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within the 1030 to 1150 MHz band.