STL18N60M2(2014) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STL18N60M2
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16 Pages
File Size
906.3 kB
生产厂家
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package
STMicroelectronics
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package ( Rev : 2014 )
STMicroelectronics
N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package
STMicroelectronics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.280 Ω typ., 11 A, MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a D²PAK package
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
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